Si4816DY
日前，Vishay Siliconix公司
双N沟道30-V（DS）中的MOSFET与肖特基二极管
产品概要
V
DS
(V)
Channel-1
30
Channel-2
Channel 2
r
DS（上）
(Ω)
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
0.013 @ V
GS
= 10 V
0.0185 @ V
GS
= 4.5 V
I
D
(A)
6.3
5.4
10
8.6
特征
D
小FOOTr
加
功率MOSFET
D
100% R
g
测试
肖特基产品概要
V
DS
(V)
30
V
SD
(V)
二极管的正向电压
0.50 V @ 1.0 A
I
F
(A)
2.0
D
1
SO-8
G
1
A/S
2
A/S
2
G
2
1
2
3
4
Top View
Ordering Information: Si4816DY
Si4816DY-T1 (with Tape and Reel)
Si4816DY—E3 (Lead (Pb)-Free)
Si4816DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
N-Channel 2
MOSFET
S
2
A
8
7
6
5
D
1
D
2
/S
1
D
2
/S
1
D
2
/S
1
Schottky Diode
G
2
G
1
N-Channel 1
MOSFET
S
1
/D
2
绝对最大额定值 (T
A
= 25_C除非另有说明）
Channel-1
参数
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode
Avalanche
Current
b
Energy
b
L = 0.1 mH
01
T
A
= 25_C
T
A
= 70_C
Single Pulse Avalanche
Conduction)
a
T
A
= 25_C
T
A
= 70_C
Channel-2
10 secs
30
20
符号
V
DS
V
GS
10 secs
稳态
稳态
单位
V
6.3
I
D
I
DM
I
S
I
AS
E
AS
1.4
P
D
T
J
, T
stg
0.9
1.3
12
7.2
5.4
30
5.3
4.2
0.9
10
8.2
40
2.2
25
31.25
7.7
6.2
A
1.15
mJ
1.25
0.8
W
_C
Maximum Power Dissipation
a
1.0
0.64
--55 to 150
2.4
1.5
Operating Junction and Storage Temperature Range
热阻额定值
Channel-1
参数
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Starting date code W46BAA.
Document Number: 71121
S-41697—Rev. E, 20-Sep-04
www.vishay.com
t
≤
10 sec
Steady-State
Steady-State
Channel-2
Typ
43
82
25
肖特基
Typ
48
80
28
符号
R
thJA
R
thJC
Typ
72
100
51
最大
90
125
63
最大
53
100
30
最大
60
100
35
单位
_C/W
C/
1
